december 2013 fqb8n90c ? n-channel qfet ? mosfet ?2012 fairchild semiconductor corporation fqb8n90c rev. c1 www.fairchildsemi.com 1 fqb8n90c n-channel qfet ? mosfet 900 v, 6.3 a, 1.9 description these n-channel enhancement mode power field effect transistors are produced using fa irchild?s proprietary, planar stripe, dmos technology. th is advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high effici ency switch mode power supplies. features ? 6.3 a, 900 v, r ds(on) = 1.9 ? (max.) @ v gs = 10 v ? low gate charge (typ. 35 nc) ? low c rss (typ. 12 pf) ?fast switching ? 100% avalanche tested ? improved dv/dt capability g s d d 2 -pak g s d absolute maximum ratings t c = 25c unless otherwise noted . thermal characteristics symbol parameter FQB8N90CTM unit v dss drain-source voltage 900 v i d drain current - continuous (t c = 25c) 6.3 a - continuous (t c = 100c) 3.8 a i dm drain current - pulsed (note 1) 25 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 850 mj i ar avalanche current (note 1) 6.3 a e ar repetitive avalanche energy (note 1) 17.1 mj dv/dt peak diode recovery dv/dt (note 3) 4.0 v/ns p d power dissipation (t c = 25c) 171 w - derate above 25c 1.37 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering, 1/8 " from case for 5 seconds. 300 c symbol parameter FQB8N90CTM unit r jc thermal resistance, junction-to-case, max. 0.73 c / w r ja thermal resistance, junction-to-ambient, max. 40
fqb8n90c ? n-channel qfet ? mosfet ?2012 fairchild semiconductor corporation fqb8n90c rev. c1 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25c unless otherwise noted . notes: 1. repetitive rating : pulse-width limited by maximum junction temperature. 2. l = 40 mh, i as = 6.3 a, v dd = 50 v, r g = 25 , starting t j = 25c. 3. i sd 8 a, di/dt 200 a/ s, v dd bv dss, starting t j = 25c. 4. essentially independent of operating temperature. part number top mark package packing method reel size tape width quantity FQB8N90CTM fqb8n90c d 2 -pak tape and reel 330 mm 24 mm 800 untis symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 900 -- -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.95 -- v/c i dss zero gate voltage drain current v ds = 900 v, v gs = 0 v -- -- 10 a v ds = 720 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 3.15 a -- 1.6 1.9 g fs forward transconductance v ds = 50 v, i d = 3.15 a -- 5.5 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 1600 2080 pf c oss output capacitance -- 130 170 pf c rss reverse transfer capacitance -- 12 15 pf switching characteristics t d(on) turn-on delay time v dd = 450 v, i d = 8 a, v gs = 10 v, r g = 25 (note 4) -- 40 90 ns t r turn-on rise time -- 110 230 ns t d(off) turn-off delay time -- 70 150 ns t f turn-off fall time -- 70 150 ns q g total gate charge v ds = 720 v, i d = 8 a, v gs = 10 v (note 4) -- 35 45 nc q gs gate-source charge -- 10 -- nc q gd gate-drain charge -- 14 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 6.3 a i sm maximum pulsed drain-source diode forward current -- -- 25 a v sd drain-source diode forward voltage v gs = 0 v, i s = 6.3 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 8 a, di f / dt = 100 a/ s -- 530 -- ns q rr reverse recovery charge -- 5.8 -- c
fqb8n90c ? n-channel qfet ? mosfet ?2012 fairchild semiconductor corporation fqb8n90c rev. c1 www.fairchildsemi.com 3 typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] 246810 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : 1. v ds = 50v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 5 10 15 20 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 v ds = 450v v ds = 180v v ds = 720v note : i d = 8a v gs , gate-source voltage [v] q g , total gate charge [nc] figure 2. transfer characteristics figure 1. on-region characteristics figure 3. on-resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature
fqb8n90c ? n-channel qfet ? mosfet ?2012 fairchild semiconductor corporation fqb8n90c rev. c1 www.fairchildsemi.com 4 typical characteristics (continued) 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 3.15 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 25 50 75 100 125 150 0 2 4 6 8 i d , drain current [a] t c , case temperature [ ] t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) figure 11. unclamped inductive switching capability
fqb8n90c ? n-channel qfet ? mosfet ?2012 fairchild semiconductor corporation fqb8n90c rev. c1 www.fairchildsemi.com 5 typical characteristics (continued) figure 12. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1. z jc (t) = 0.73 /w m ax. 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square wave pulse duration [sec] t 1 p dm t 2 z jc (t), thermal response [ o c/w]
fqb8n90c ? n-channel qfet ? mosfet ?2012 fairchild semiconductor corporation fqb8n90c rev. c1 www.fairchildsemi.com 6 figure 13. gate charge test circuit & waveform figure 14. resistive switching test circuit & waveforms figure 15. unclamped inductive switching test circuit & waveforms v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p v gs v gs i g = const.
fqb8n90c ? n-channel qfet ? mosfet ?2012 fairchild semiconductor corporation fqb8n90c rev. c1 www.fairchildsemi.com 7 figure 16. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
fqb8n90c ? n-channel qfet ? mosfet ?2012 fairchild semiconductor corporation fqb8n90c rev. c1 www.fairchildsemi.com 8 mechanical dimensions figure 17. to263 (d 2 pak), molded, 2-lead, surface mount package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tt263-002
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